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200PIN DDR266 Unbuffered SO-DIMM
1GB With 64Mx8 CL2.5
Description
The TS128MSD64V6A is a 128M x 64bits Double Data
Rate SDRAM high-density for DDR266. The
TS128MSD64V6A consists of 16pcs CMOS 64Mx8 bits
Double Data Rate SDRAMs in 60 Ball FBGA packages and
a 2048 bits serial EEPROM on a 200-pin printed circuit
board. The TS128MSD64V6A is a Dual In-Line Memory
Module and is intended for mounting into 200-pin edge
connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be useful
for a variety of high bandwidth, high performance memory
system applications.
Features
• Power supply: VDD= VDDQ: 2.5V ± 0.1V,
• Max clock Freq: 133MHZ.
• Double-data-rate architecture; two data transfers per
clock cycle
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CLK transition
• Commands entered on each positive CLK edge
• Auto and Self Refresh.
• Data I/O transactions on both edge of data strobe.
• Serial Presence Detect (SPD) with serial EEPROM
• SSTL-2 compatible inputs and outputs.
• MRS cycle with address key programs.
CAS Latency (Access from column address) : 2.5
Burst Length (2,4,8)
Data Sequence (Sequential & Interleave)
Placement
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PCB: 09-1870
Transcend Information Inc.
1
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Sommario

Pagina 1

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 Description The TS128MSD64V6A is a 128M x 64bits Double

Pagina 2

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 SIMPLIFIED TRUTH TABLE (V=Valid, X=Don’t Care, H=Logic

Pagina 3

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 Serial Presence Detect Specification 75 11 DIMM config

Pagina 4

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 42 53 DDR SDRAM Minimum Auto-Refresh to Active / Auto R

Pagina 5

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 Dimensions DQS0~DQS7 Data strobe input/output Side M

Pagina 6 - DC CHARACTERISTICS

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 Pinouts: 74 *CB5 142 DQ4416 VSS 84 *CB7 161 VSS 2

Pagina 7

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 Block Diagram SCL SDASCLSDASerial EEPROMA0 A1 A2SA0 S

Pagina 8

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 ABSOLUTE MAXIMUM RATINGS Parameter Max Unit Note 1.35

Pagina 9

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 DC CHARACTERISTICS (Recommended operating condition unl

Pagina 10

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 AC OPERATING CONDITIONS Parameter SymbolV Input Le

Pagina 11 - Transcend Information Inc

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 AC Timing Parameters & Specifications (These AC cha

Pagina 12

TTTSSS111222888MMMSSSDDD666444VVV666AAA 200PIN DDR266 Unbuffered SO-DIMM 1GB With 64Mx8 CL2.5 DQ & DM hold time to DQS 3 Note: tDH 0.50 ns 1.

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